3D Quantum Numerical Simulation of Horizontal Rectangular Dual Metal Gate\Gate All Around MOSFETs
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چکیده
The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their drain current. In addition, our TFET showed reasonable I of (10) and low drain induced barrier lowering (DIBL) of 39 Keywords—GAA, SILVACO, QUANTUM,
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